CXMT to build NAND flash R&D line in Beijing, Reuters reports

September 18, 2026 at 01:53 PM1 min

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Chinese memory maker CXMT plans to establish a NAND flash research and development line at its new Beijing facility, Reuters reported on Friday. The move would pit CXMT against domestic rival YMTC and global leaders Samsung and Micron amid a global memory shortage.

Key Facts

CXMT plans to set up a NAND flash R&D line at its new Beijing plant, according to Reuters.
The initiative would put CXMT in direct competition with YMTC, Samsung, and Micron in the NAND market.
SK hynix CEO Kwak Noh-jung said in July that 2027 could be the worst year for memory supply.
TrendForce expects NAND availability to improve only in the second half of 2027.
YMTC has already sent LPDDR samples to customers, encroaching on CXMT's DRAM territory.

Beijing NAND Facility

CXMT will install a pilot NAND production line at its new Beijing plant, according to Reuters sources. A research center in the Chinese capital will develop related technologies alongside other CXMT projects. The company has discussed its NAND plans with at least one startup and other potential customers. No timeline has been disclosed for moving from experiments to full-scale production.

Market Competition

The move would expand CXMT beyond DRAM into NAND, where Samsung, Micron, and YMTC currently dominate. YMTC has already entered CXMT's DRAM segment by sending low-power LPDDR samples to clients in April. Both companies are also pursuing HBM production for AI accelerators.

Global Memory Shortage

AI data center demand has created a global memory shortage expected to persist until at least 2027. SK hynix CEO Kwak Noh-jung said in July that 2027 may be the worst year for supply. TrendForce projects NAND availability will begin improving only in the second half of 2027. Producers are shifting resources toward DRAM and HBM, reducing NAND output and driving up prices.